1. Minimum channel length of the transistor should be four to five times the minimum feature size
of the process. We do it, to make the lambda of the transistor low i.e. the rate of change of Id w.r.t
to Vds is low.
晶体管最小沟长为工艺最小特征尺寸的 4-5 倍,用来减小沟长调制效应。
2. Present art of analog design still uses the transistor in the saturation region. So one should
always keep Vgs of the Transistor 30% above the Vt.